advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 40v single drive requirement r ds(on) 25m surface mount package i d 7a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice rohs-compliant product 1 AP9962GM 200901202 parameter rating drain-source voltage 40 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 7 continuous drain current 3 , v gs @ 10v 5.5 pulsed drain current 1 20 total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.016 thermal data parameter storage temperature range advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.1 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 25 m ? v gs =4.5v, i d =5a - - 40 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =7a - 11 - s i dss drain-source leakage current v ds =40v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =32v ,v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =7a - 25.8 - nc q gs gate-source charge v ds =32v - 4.4 - nc q gd gate-drain ("miller") charge v gs =10v - 9.1 - nc t d(on) turn-on delay time 2 v ds =20v - 10.6 - ns t r rise time i d =1a - 6.8 - ns t d(off) turn-off delay time r g =5.7 , v gs =10v - 26.3 - ns t f fall time r d =20 -12- ns c iss input capacitance v gs =0v - 1165 - pf c oss output capacitance v ds =25v - 205 - pf c rss reverse transfer capacitance f=1.0mhz - 142 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 is=7a, v gs =0 v , - 21.2 - ns qrr reverse recovery charge di/dt=100a/s - 16 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP9962GM
AP9962GM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 15 20 25 30 35 34567891011 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =7a t a =25 o c 0 5 10 15 20 25 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 8.0v v g =3.0v 5.0v 10v 4.0v 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v 0 5 10 15 20 25 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 8.0v 5.0v 4.0v v g =3.0v 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 0 50 100 150 junction temperature ( o c ) v gs (th) 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd ,source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time circuit fig 12. gate charge circuit AP9962GM 4 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1s 1ms 10ms 100ms dc 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v v ds =25v v ds =32v i d =7a 0.8x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 ma 0.5x rated v ds to the oscilloscope - + 10v d g s v ds v gs r g r d 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a rthja = 135 /w t t 0.02
millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 e g l 0.38 0.90 0.00 4.00 8.00 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ 0.254 typ package outline : so-8 advanced power electronics corp. e b 1 34 5 6 7 8 2 d e1 a1 a g part number 9962 g m ywwsss package code date code (ywwsss) y last digit of the year ww week sss sequence e meet rohs requirement
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